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| PROFET(R) BTS 432 I2 Smart Highside Power Switch Features * Load dump and reverse battery protection1) VLoad dump * Clamp of negative voltage at output Vbb-VOUT Avalanche * Short-circuit protection Vbb (operation) * Current limitation Vbb (reverse) * Thermal shutdown RON * Diagnostic feedback IL(SCp) * Open load detection in OFF-state IL(SCr) * CMOS compatible input IL(ISO) * Electrostatic discharge (ESD) protection * Loss of ground and loss of Vbb protection2) * Overvoltage protection * Undervoltage and overvoltage shutdown with auto-restart and hysteresis Product Summary 80 Clamp 58 4.5 ... 42 -32 38 42 33 11 V V V V m A A A 5 Application * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS(R) chip on chip technology. Fully protected by embedded protection functions. R bb + Vbb 3 Voltage source Overvoltage protection Current limit Gate protection OUT V Logic Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads 2 IN Temperature sensor 5 Load 4 ST Short circuit detection GND (R) PROFET Load GND 1 Signal GND 1) 2) No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Semiconductor Group 1 04.96 BTS 432 I2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... Symbol Vbb Vs3) Values 63 66.5 self-limited -40 ...+150 -55 ...+150 125 1.7 2.0 -0.5 ... +6 5.0 5.0 1 75 tbd Unit V V A C W J kV V mA IL Tj Tstg Ptot EAS VESD VIN IIN IST Thermal resistance chip - case: junction - ambient (free air): SMD version, device on pcb4): RthJC RthJA K/W 3) 4) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 BTS 432 I2 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Tj=25 C: RON Tj=150 C: IL(ISO) IL(GNDhigh) -9 -- 30 55 11 -- 38 70 -1 m A mA s ton toff dV /dton -dV/dtoff 50 10 0.4 1 160 ---- 300 80 2.5 5 V/s V/s Operating Parameters Tj =-40...+150C: Operating voltage 5) Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Undervoltage restart of charge pump Tj =-40...+150C: see diagram page 12 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C: Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis 6) Tj =-40C: Overvoltage protection Ibb=40 mA Tj =25...+150C: Standby current (pin 3) Tj=-40...+25C: VIN=0, IST=0, Tj=150C: Operating current (Pin 1)7), VIN=5 V Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) 4.5 2.4 ---42 42 -60 63 ---- ---6.5 0.2 --0.2 -67 40 50 1.1 42 4.5 4.5 7.5 -52 ---- V V V V V V V V V A Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IGND 70 110 -- mA 5) 6) 7) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 3 BTS 432 I2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Initial peak short circuit current limit (pin 3 to 5)8), IL(SCp) ( max 400 s if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC) min value valid only, if input "low" time exceeds 30 s --22 20 80 -42 -33 -- 72 ---400 A A s V V C K J Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation9), Tj Start = 150 C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 10) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current Open load detection voltage VON(CL) VON(SC) Tjt Tjt EAS ELoad12 ELoad24 -Vbb Rbb --150 --- 58 8.3 -10 -- ----1.7 1.3 1.0 32 -- --- -120 V IL(off) Tj=-40..150C: VOUT(OL) 10 2 30 3 60 4 A V 8) 9) Short circuit current limit for max. duration of 400 s, prior to shutdown (see td(SC) page 4) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx. VON(CL) 2 ), see diagram page 8 EAS= 1/2 * L * IL * ( VON(CL) - Vbb 10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group 4 BTS 432 I2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback11) Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage VIN(T+) VIN(T-) 1.5 1.0 -1 10 40 80 --0.5 -25 -200 2.4 --30 50 300 400 V V V A A s s Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 2) On state input current (pin 2) Delay time for status with open load after Input neg. slope (see diagram page 12) VIN(T) VIN = 0.4 V: IIN(off) VIN = 3.5 V: IIN(on) td(ST OL3) Status invalid after positive input slope Tj=-40 ... +150C: (short circuit) Status output (CMOS) Tj =-40...+150C, IST= - 50 A: Tj =-40...+150C, IST = +1.6 mA: Max. status current for current source (out): valid status output, current sink (in) : Tj =-40...+150C td(ST SC) VST(high)12) VST(low) -IST +IST13) 4.4 ---- 5.1 ---- 6.5 0.4 0.25 1.6 V mA 11) If a ground resistor RGND is used, add the voltage drop across this resistor. VSt high Vbb during undervoltage shutdown 13) No current sink capability during undervoltage shutdown 12) Semiconductor Group 5 BTS 432 I2 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 14) Status 432 D2 H H H L H L H H (L15)) L L L16) L16) L L 432 E2/F2 H H H L H L H H (L15)) L L H H H H 432 I2 H H L H H L L H L L L16) L16) L L H L L H H L L L L L L Terms Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON Status output VLogic ST GND ESDZD Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ, ESD zener diodes are not designed for continuous current Short Circuit detection Input circuit (ESD protection) R IN I Fault Condition: VON > 8.3 V typ.; IN high + V bb ESDZDI1 ZDI2 GND I I V ON OUT ZDI1 6.1 V typ., ESD zener diodes are not designed for continuous current Logic unit Short circuit detection 14) 15) 16) Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection No current sink capability during undervoltage shutdown Semiconductor Group 6 BTS 432 I2 Inductive and overvoltage output clamp + V bb V Z V ON GND disconnect 3 IN Vbb PROFET OUT 2 5 OUT GND 4 V bb V IN V ST ST GND 1 V GND VON clamped to 58 V typ. Overvolt. and reverse batt. protection + V bb Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. GND disconnect with GND pull up 3 IN Vbb PROFET 4 ST GND 1 OUT V R IN Z R bb IN Logic V 2 OUT R ST ST GND 5 PROFET R GND Signal GND Rbb = 120 typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection V V bb V IN ST V GND Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Vbb disconnect with charged inductive load 3 high 2 IN Vbb PROFET OUT OFF I L(OL) 5 4 ST GND 1 Logic unit Open load detection V OUT V Signal GND bb 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT 5 bb Semiconductor Group 7 BTS 432 I2 Inductive Load switch-off energy dissipation E bb E AS V bb PROFET OUT EL GND ER ELoad IN = ST Energy dissipated in PROFET EAS = Ebb + EL - ER. ELoad < EL, EL = 1/2 * L * I L 2 Semiconductor Group 8 BTS 432 I2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 432D2 432E2 432F2 432I2 D X X X X X X E F X I X Overtemperature protection Tj >150 C, latch function17)18) Tj >150 C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.17) (when first turned on after approx. 200 s) Open load detection in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X X X X X X -19) X X X X X X X X X X X -19) X X X X X X -19) X X X X X X X X X X Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 18) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 19) Low resistance short V to output may be detected by no-load-detection bb 17) Semiconductor Group 9 BTS 432 I2 Timing diagrams Figure 1a: Vbb turn on: IN IN t d(bb IN) V bb ST Figure 2b: Switching an inductive load V OUT V A OUT ST CMOS I t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s L t Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit, IN IN ST ST V OUT V OUT td(SC) I L I L t t td(SC) approx. 200s if Vbb - VOUT > 8.3 V typ. Semiconductor Group 10 BTS 432 I2 Figure 3b: Turn on into overload, IN Figure 4a: Overtemperature, Reset if (IN=low) and (Tj IL I L(SCp) I L(SCr) ST V OUT ST t T J t Heating up may require several milliseconds , Vbb - VOUT < 8.3 V typ. *) ST goes high , when VIN=low and Tj IN IN ST t d(ST OL1) ST V OUT V OUT t d(OL ST2) IL **) I t L normal open normal **) current peak approx. 20 s t td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ Semiconductor Group 11 BTS 432 I2 Figure 5b: Open load: detection in OFF-state, turn on/off to open load Figure 6a: Undervoltage: IN IN Vbb V Vbb(u cp) V bb(u rst) ST td(ST OL3) bb(under) V OUT V OUT I L ST CMOS open normal *) t t in case of external capacity td(ST,OL3) may be higher due to high impedance *) IL = 30 A typ Figure 6b: Undervoltage restart of charge pump VON [V] V on VON(CL) off Figure 5c: Open load: detection in OFF-state, open load occurs in off-state IN ST off V bb(over) V OUT V V V bb(u rst) bb(o rst) bb(u cp) V I L bb(under) on V bb normal load *) open load normal load *) t charge pump starts at Vbb(ucp) =6.5 V typ. Vbb [V] *) IL = 30 A typ Semiconductor Group 12 BTS 432 I2 Figure 7a: Overvoltage: IN Vbb VON(CL) Vbb(over) V bb(o rst) V OUT ST t Semiconductor Group 13 BTS 432 I2 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 432 I2 Ordering code Q67060-S6204-A2 SMD TO-220AB/5, Opt. E3122 Ordering code BTS 432 I2 E3122A T&R: Q67060-S6204-A3 Semiconductor Group 14 |
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